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Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film: AIP Advances: Vol 6, No 2
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AD device endurance under low-and highcurrent conditions. Low-voltage... | Download Scientific Diagram
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a Current–voltage characteristics of the PCM cell fabricated with the... | Download Scientific Diagram
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Figure 5 | Constructing reliable PCM and OTS devices with an interfacial carbon layer | SpringerLink
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Endurance characteristic of PCM cells in the array. The inset shows the... | Download Scientific Diagram
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Endurance cycle for 200 nm e-PCM device with a self-aligned oxidation... | Download Scientific Diagram
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Endurance cycle for 200 nm e-PCM device with a self-aligned oxidation... | Download Scientific Diagram
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PDF) Carbon Layer Application in Phase Change Memory to Reduce Power Consumption and Atomic Migration
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